Seite - 230 - in Emerging Technologies for Electric and Hybrid Vehicles

Energies 2016,9, 410 Table1.Stressanalysis resultsat steady-state. Items ChargeState DischargeState VoltageStressofQ1,Q3,Q4 (vQ1,vQ3,vQ4) 0.5VH 0.5VH VoltageStressofQ2 (vQ2) VH VH VoltageStressofS1~S4 (vS1~vS4) VL VL RMSCurrentStressofQ1 (iQ1) IL2pRMSq a Dd IL2pRMSq a 1´Db RMSCurrentStressofQ2 (iQ2) IL1pRMSq a Dd IL1pRMSq a 1´Db RMSCurrentStressofQ3 (iQ3) IL1pRMSq a 1´Dd IL1pRMSq a Db RMSCurrentStressofQ4 (iQ4) gffe pILtpRMSqq2pDdq` pIL2pRMSqq2p0.5´Ddq gffe pILtpRMSqq2p1´Dbq` pIL2pRMSqq2pDb´0.5q RMSCurrentStressofS1~S4 (iS1~iS4) ILtpRMSq{ ? 2 ILtpRMSq{ ? 2 RMSCurrentStressofL1 (iL1) b IL12`pΔiL12?3q b IL12`pΔiL12?3q RMSCurrentStressofL2 (iL2) b IL22`pΔiL22?3q b IL22`pΔiL22?3q RMSCurrentStressofLa (iLa) b ILa2`pΔiLa2?3q b ILa2`pΔiLa2?3q RMSCurrentStressofLb (iLb) b ILb2`pΔiLb2?3q b ILb2`pΔiLb2?3q RMSCurrentStressofCB (iCB) ` IL a 2Dd ˘{4 ´ILa2p1´Dbq¯{4 RMSCurrentStressofCH (iCH) b pIQ1pRMSqq2´ IH b pIQ1pRMSqq2´ IH RMSCurrentStressofCL (iCL) b IL2´ 4ΔiLaILπ ` 4ΔiLa 2 π2 ` ΔiLa22 b IL2´ 4ΔiLaILπ ` 4ΔiLa 2 π2 ` ΔiLa22 RMSCurrentStressofCM1,CM2 (iCM1, iCM2) b ILtpRMSq2´ IS1pRMSq2 b ILtpRMSq2´ IS2pRMSq2 Table2.Lossequationsat steady-state. Items Equations Conduction lossofQ1~Q4 RDSpQ1q ˆriQ1pRMSqs2;RDSpQ2q ˆriQ2pRMSqs2;RDSpQ3q ˆriQ3pRMSqs2;RDSpQ4q ˆriQ4pRMSqs2 Conduction lossofS1~S4 RDSpS1q ˆriS1pRMSqs2;RDSpS2q ˆriS2pRMSqs2;RDSpS3q ˆriS3pRMSqs2;RDSpS4q ˆriS4pRMSqs2 Switching lossofQ1 pVDSpQ1q ˆ iQ1pONq ˆTrq{6Tsw; pVDSpQ1q ˆ iQ1pOFFq ˆTfq{6Tsw Switching lossofQ2 pVDSpQ2q ˆ iQ2pONq ˆTrq{6Tsw; pVDSpQ2q ˆ iQ2pOFFq ˆTfq{6Tsw Switching lossofQ3 pVDSpQ3q ˆ iQ3pONq ˆTrq{6Tsw; pVDSpQ3q ˆ iQ3pOFFq ˆTfq{6Tsw Switching lossofQ4 pVDSpQ4q ˆ iQ4pONq ˆTrq{6Tsw; pVDSpQ4q ˆ iQ4pOFFq ˆTfq{6Tsw Switching lossofS1 ´ VDSpS1q ˆ iS1pONq ˆTr ¯ {6Tsw; pVDSpS1q ˆ iS1pOFFq ˆTfq{6Tsw Switching lossofS2 pVDSpS2q ˆ iS2pONq ˆTrq{6T; ´ VDSpS2q ˆ iS2pOFFq ˆTf ¯ {6T Switching lossofS3 pVDSpS3q ˆ iS3pONq ˆTrq{6Tsw; pVDSpS3q ˆ iS3pOFFq ˆTfq{6Tsw Switching lossofS4 pVDSpS4q ˆ iS4pONq ˆTrq{6Tsw; pVDSpS4q ˆ iS4pOFFq ˆTfq{6Tsw Conduction lossofL1~L2 RL1ˆriL1pRMSqs2;RL2ˆriL2pRMSqs2 Conduction lossofLa~Lb RLaˆriLapRMSqs2;RLbˆriLbpRMSqs2 Conduction lossofCB,CH,CL RCBˆriCBpRMSqs2;RCHˆriCHpRMSqs2;RCLˆriCLpRMSqs2 Conduction lossofCM1~CM2 RCM1ˆriCM1pRMSqs2;RCM2ˆriCM2pRMSqs2 Gatedriving lossofQ1~Q4 QgpQ1„Q4q ˆVGSpQ1„Q4q ˆ fsw Gatedriving lossofS1~S4 QgpS1„S4q ˆVGSpS1„S4q ˆ fsw 4. SimulationandExperimentalResults In order to illustrate the performance of the studied BDC, a laboratory prototype circuit is simulatedandexperimented. Toavoidall elementssuffer fromhigh-currentstressatDCMoperation, resulting inhighconductionandcore losses. ThestudiedBDCoperatesatCCM,anditsparameters andspecificationsof theconstructedhardwareprototypearegivenasbelow: (1) high-sidevoltageVH: 385V; (2) low-sidevoltageVL: 48V; (3) ratedpowerPo: 500W; 230