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Thestructuralmodelconstructedforeachsampleconsistsofastratifiedlayer
stackofopticallydistinctmaterials,whichmaybecontinuousfilms, interfaceswith
unique ε and thickness, or Bruggeman effective medium approximation layers.
Ellipsometric spectra are modeled using a scattering matrix formalism [44] in
which 2ˆ2 matrices based on Fresnel coefficients and wave propagation of light
throughmedia isgeneratedfor thesemi-infinitesubstrateandambient, each layer
offinite thickness,andthe interfacesbetweeneachopticallydistinct layer. Matrices
are calculated for the components of the incident electric field both parallel and
perpendicular totheplaneof incidence. Ingeneral,ellipsometricspectraaresensitive
to spectra in ε for each material, including the ambient and substrate, and the
thicknessesofopticallyfinite layers.
3. ResultsandDiscussion
3.1. OpticalCharacterizationofBackReflectorComponentsandStructure
The first layers deposited for n-i-p configuration a-Si:H solar cells comprise
the ZnO/Ag BR structure. Therefore, ellipsometric spectra from 0.04 to 5.0 eV are
collected and analyzed for a ZnO/Ag BR structure. The models and thicknesses
describedherefirstcorrespondtoaZnOcoatedAgBRsample,whilevariations in
propertiesduetogrowthofover-depositedn-and i-typea-Si:Hlayers isdescribedin
Section3.3.1. All layersweredepositedwithoutvacuumbreakwithconditionsgiven
inTable1. InsituSEdata from0.734eVto5.88eVwascollectedforeachdeposited
layer and the model generated was used for extended spectral range IR-SE analysis.
3.1.1. AgandZnO+AgInterfaceProperties
Data collected for semi-infinite Ag substrate were taken before ZnO layer
depositionat roomtemperatureandwereanalyzedintheenergyrangefrom0.734
to5.88eV.Figure1showsspectra in ε forAgparameterizedbyacombinationofa
Drude oscillator [45], a higher energy transition assuming critical point parabolic
bands (CPPB) [46], and a constant additive term to ε1 denoted as ε8. The surface
roughness is represented by two Lorentz oscillators [47] with ε8= 1. The Drude
oscillator is representedby:
εpEq“ ´} 2
ε0ρpτE2` i}Eq (3)
where h¯ is the reduced Planck’s constant, ε0 is the permittivity of free space,τ is the
scatteringtime,andρ is theresistivity. EachCPPBoscillator is representedby:
εpEq“Aeiφ "
Γ
r2En´2E´ iΓs *µ
(4)
71
Photovoltaic Materials and Electronic Devices
- Title
- Photovoltaic Materials and Electronic Devices
- Author
- Joshua M. Pearce
- Editor
- MDPI
- Location
- Basel
- Date
- 2016
- Language
- English
- License
- CC BY-NC-ND 4.0
- ISBN
- 978-3-03842-217-4
- Size
- 17.0 x 24.4 cm
- Pages
- 216
- Keywords
- Perovskite, Plasmonics, Nanostructured Materials, Anti-Reflection Coatings, Transparent Conductive Oxides, Amorphous Silicon, Dye-sensitized Solar Cells (DSSCs) Materials, Organic Photovoltaic Materials, Solar Energy Materials
- Categories
- Naturwissenschaften Physik
- Technik