Web-Books
in the Austria-Forum
Austria-Forum
Web-Books
Naturwissenschaften
Physik
Photovoltaic Materials and Electronic Devices
Page - 71 -
  • User
  • Version
    • full version
    • text only version
  • Language
    • Deutsch - German
    • English

Page - 71 - in Photovoltaic Materials and Electronic Devices

Image of the Page - 71 -

Image of the Page - 71 - in Photovoltaic Materials and Electronic Devices

Text of the Page - 71 -

Thestructuralmodelconstructedforeachsampleconsistsofastratifiedlayer stackofopticallydistinctmaterials,whichmaybecontinuousfilms, interfaceswith unique ε and thickness, or Bruggeman effective medium approximation layers. Ellipsometric spectra are modeled using a scattering matrix formalism [44] in which 2ˆ2 matrices based on Fresnel coefficients and wave propagation of light throughmedia isgeneratedfor thesemi-infinitesubstrateandambient, each layer offinite thickness,andthe interfacesbetweeneachopticallydistinct layer. Matrices are calculated for the components of the incident electric field both parallel and perpendicular totheplaneof incidence. Ingeneral,ellipsometricspectraaresensitive to spectra in ε for each material, including the ambient and substrate, and the thicknessesofopticallyfinite layers. 3. ResultsandDiscussion 3.1. OpticalCharacterizationofBackReflectorComponentsandStructure The first layers deposited for n-i-p configuration a-Si:H solar cells comprise the ZnO/Ag BR structure. Therefore, ellipsometric spectra from 0.04 to 5.0 eV are collected and analyzed for a ZnO/Ag BR structure. The models and thicknesses describedherefirstcorrespondtoaZnOcoatedAgBRsample,whilevariations in propertiesduetogrowthofover-depositedn-and i-typea-Si:Hlayers isdescribedin Section3.3.1. All layersweredepositedwithoutvacuumbreakwithconditionsgiven inTable1. InsituSEdata from0.734eVto5.88eVwascollectedforeachdeposited layer and the model generated was used for extended spectral range IR-SE analysis. 3.1.1. AgandZnO+AgInterfaceProperties Data collected for semi-infinite Ag substrate were taken before ZnO layer depositionat roomtemperatureandwereanalyzedintheenergyrangefrom0.734 to5.88eV.Figure1showsspectra in ε forAgparameterizedbyacombinationofa Drude oscillator [45], a higher energy transition assuming critical point parabolic bands (CPPB) [46], and a constant additive term to ε1 denoted as ε8. The surface roughness is represented by two Lorentz oscillators [47] with ε8= 1. The Drude oscillator is representedby: εpEq“ ´} 2 ε0ρpτE2` i}Eq (3) where h¯ is the reduced Planck’s constant, ε0 is the permittivity of free space,τ is the scatteringtime,andρ is theresistivity. EachCPPBoscillator is representedby: εpEq“Aeiφ " Γ r2En´2E´ iΓs *µ (4) 71
back to the  book Photovoltaic Materials and Electronic Devices"
Photovoltaic Materials and Electronic Devices
Title
Photovoltaic Materials and Electronic Devices
Author
Joshua M. Pearce
Editor
MDPI
Location
Basel
Date
2016
Language
English
License
CC BY-NC-ND 4.0
ISBN
978-3-03842-217-4
Size
17.0 x 24.4 cm
Pages
216
Keywords
Perovskite, Plasmonics, Nanostructured Materials, Anti-Reflection Coatings, Transparent Conductive Oxides, Amorphous Silicon, Dye-sensitized Solar Cells (DSSCs) Materials, Organic Photovoltaic Materials, Solar Energy Materials
Categories
Naturwissenschaften Physik
Technik
Web-Books
Library
Privacy
Imprint
Austria-Forum
Austria-Forum
Web-Books
Photovoltaic Materials and Electronic Devices