Page - 84 - in Photovoltaic Materials and Electronic Devices
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kept commonbetween the two setsof spectra. For the i-layer, the nominal substrate
temperature and hydrogen dilution ratio were T = 200˝C and R = 10, respectively.
Theoptimizedn-typea-Si:Hthicknesswasfixedat278ÅforR=50asfoundbyRTSE
growth evolution studies. The depositing material fills the void space in the surface
roughness layer of the underlying film. The protrusions in the surface roughness of
the substrate film are coated with the depositing material, generating an interface
layer associatedwith thegrowingfilm. Bruggeman effectivemedium approximation
definesspectra in ε for these interfaces.
84
Photovoltaic Materials and Electronic Devices
- Title
- Photovoltaic Materials and Electronic Devices
- Author
- Joshua M. Pearce
- Editor
- MDPI
- Location
- Basel
- Date
- 2016
- Language
- English
- License
- CC BY-NC-ND 4.0
- ISBN
- 978-3-03842-217-4
- Size
- 17.0 x 24.4 cm
- Pages
- 216
- Keywords
- Perovskite, Plasmonics, Nanostructured Materials, Anti-Reflection Coatings, Transparent Conductive Oxides, Amorphous Silicon, Dye-sensitized Solar Cells (DSSCs) Materials, Organic Photovoltaic Materials, Solar Energy Materials
- Categories
- Naturwissenschaften Physik
- Technik