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51. Bundesmann,C.; Ashkenov,N.; Schubert, M.; Rahm, A.; Wenckstern, H.; Kaidashev, E.; Lorenz, M.; Grundmann, M. Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry. ThinSolidFilms 2004, 455, 161–166. 52. Ashkenov, N.; Mbenkum, B.N.; Bundesmann, C.; Riede, V.; Lorenz, M.; Spemann, D.; Kaidashev, E.M.; Kasic, A.; Schubert, M.; Grundmann, M.; et al. Infrared dielectric functionsandphononmodesofhigh-qualityZnOfilms. J.Appl. Phys. 2003, 93, 126–133. 53. Tzolov, M.; Tzenov, N.; Dimova-Malinovska, D.; Kalitzova, M.; Pizzuto, C.; Vitali, G.; Zollo, G.; Ivanov, I. Vibrational properties and structure of undoped and Al-doped ZnO filmsdepositedbyRFmagnetronsputtering. ThinSolidFilms 2000, 379, 28–36. 54. Keyes, B.; Gedvilas, L.; Li, X.; Coutts, T. Infrared spectroscopy of polycrystalline ZnO andZnO:Nthinfilms. J.Cryst. Growth 2005, 281, 297–302. 55. Saint John,D.S.; Shin,H.-B.; Lee,M.-Y.; Ajmera,S.; Syllaios,A.; Dickey,E.; Jackson,T.; Podraza,N. Influenceofmicrostructureandcompositiononhydrogenatedsiliconthin film properties for uncooled microbolometer applications. J. Appl. Phys. 2011, 110, 033714. 56. Podraza,N.;Li, J.;Wronski,C.;Dickey,E.;Collins,R.Analysisofcontrolledmixed-phase (amorphous + microcrystalline) silicon thin films by real time spectroscopic ellipsometry. J.Vac. Sci. Technol. A 2009, 27, 1255–1259. 57. Podraza,N.;Li, J.;Wronski,C.; Dickey,E.; Horn,M.; Collins,R.AnalysisofSi1´´xGex:H thinfilmswithgradedcompositionandstructurebyreal timespectroscopicellipsometry. Phys. StatusSolidi 2008, 205, 892–895. 58. Aspnes,D.;Theeten,J.SpectroscopicanalysisoftheinterfacebetweenSianditsthermally grownoxide. J.Electrochem. Soc. 1980, 127, 1359–1365. 59. Kroll, U.; Meier, J.; Shah, A.; Mikhailov, S.; Weber, J. Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution. J. Appl. Phys. 1996, 80, 4971–4975. 60. Funde,A.M.;Bakr,N.A.;Kamble,D.K.;Hawaldar,R.R.;Amalnerkar,D.P.; Jadkar,S.R. Influence of hydrogen dilution on structural, electrical and optical properties of hydrogenatednanocrystallinesilicon (nc-Si:H) thinfilms prepared byplasmaenhanced chemical vapour deposition (PE-CVD). Sol. Energy Mater. Sol. Cells 2008, 92, 1217–1223. 61. Cao, X.; Stoke, J.A.; Li, J.; Podraza, N.J.; Du, W.; Yang, X.; Attygalle, D.; Liao, X.; Collins, R.W.; Deng, X. Fabrication and optimization of single-junction nc-Si:H n-i-p solar cells using Si:H phase diagram concepts developed by real time spectroscopic ellipsometry. J.Non-Cryst. Solids 2008, 354, 2397–2402. 62. Yan,B.;Yue,G.;Yang,J.;Guha,S.;Williamson,D.;Han,D.; Jiang,C.-S.Hydrogendilution profilingforhydrogenatedmicrocrystallinesiliconsolarcells. Appl. Phys. Lett. 2004,85, 1955–1957. 63. Wronski,C.;Collins,R.Phaseengineeringofa-Si:Hsolarcells foroptimizedperformance. Sol. Energy 2004, 77, 877–885. 94
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Photovoltaic Materials and Electronic Devices
Title
Photovoltaic Materials and Electronic Devices
Author
Joshua M. Pearce
Editor
MDPI
Location
Basel
Date
2016
Language
English
License
CC BY-NC-ND 4.0
ISBN
978-3-03842-217-4
Size
17.0 x 24.4 cm
Pages
216
Keywords
Perovskite, Plasmonics, Nanostructured Materials, Anti-Reflection Coatings, Transparent Conductive Oxides, Amorphous Silicon, Dye-sensitized Solar Cells (DSSCs) Materials, Organic Photovoltaic Materials, Solar Energy Materials
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