Seite - 72 - in Photovoltaic Materials and Electronic Devices
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where A, En,Γ,µ, andϕare the amplitude, resonance energy, broadening, exponent,
andphaseof thecriticalpoint, respectively. Theexponentµcanassumethevalues
of1/2,0,and´1/2dependingonwhether thecriticalpointsareone, two,or three
dimensional in nature. In this work, only the one dimensional CPPB oscillator
has been used, and so its value was fixed at µ = 0.5. Each Lorentz oscillator is
representedby:
εpEq“ AΓE0”
E02´E2´ iΓE ı (5)
where A, Γ, and E0 represent amplitude, broadening, and resonance energy
respectively. All parameters describing Ag and its surface roughness are listed in
Table 2. A resistivity of 3.02˘0.03ˆ10´6Ωcm and a scattering time of 16.7˘0.1 fs
weredeterminedfromtheDrudeoscillatorparametersof theAgfilm.
22
E
iEn
where
A,
En,
Γ,
,
and
are
the
amplitude,
resonance
energy,
broadening,
exponent,
and
phase
of
critical point, respectively. The exponent
can assume the values of 1/2, 0, and
1/2 depending
whether the critical points are one, two, or three dime sional in natur . In this work, only the
dimensional CPPB oscillator has been used, and so its value was fixed at
= 0.5. Each Lorentz
oscillator is represented by:
0
2 2
0
( )
A
EE
E E i E
where A,
, and E0 represent amplitude, broadening, and resonance energy respectively.
parameters describing Ag and its surface roughness are listed in Table 2. A resistivity
±
0.03
×
10−6
cm
and
a
scattering
time
of
16.7
0.1
fs
were
determined
from
the
Drude
oscillator
parameters of the Ag
fil .
Figure 1. Complex dielectric function spectra, ε = ε1 + iε2, (arrow pointing left for ε1 axis, arrow
pointing right for ε2 axis) from 0.734 to 5.88 eV for a semi‐infinite Ag film parameterized with a
combination
of
a
Drude
oscillator
and
two
oscillators
assuming
critical
point
parabolic
bands
(CPPB)
with parameters listed in
Table 2.
Table 2. Parameters describing complex dielectric function (ε = ε1 + iε2) and structure for a
semi‐infinite Ag film on a borosilicate glass over coated by Cr before ZnO deposition. Experimental
ellipsometric
spectra
were
collected
in
situ
after
deposition
at
room
temperature
in
the
spectral
range
from 0.734 to 5.88 eV and fit using least square regression analysis with an unweighted estimator
error
function,
=
5
×
10−3.
For
bulk
Ag,
the
parameterization
of
ε
consisted
of
a
Drude
oscillator,
two
oscillators
assuming
critical
point
parabolic
bands
(CPPB),
and
a
constant
additive
term
to
ε1
denoted
ε
. Spectra in ε for the 30 ± 2 Å surface roughness layer were parameterized with two Lorentz
oscillators and
ε
= 1.
Ag Surface Roughness
Oscillator A (Unitless) (eV) E0 (eV) ‐ ‐
Lorentz 4.2 ± 0.2 2.5 ± 0.1 5.17 ± 0.02 ‐ ‐
Lorentz 1.0 ± 0.3 0.06 ± 0.03 3.61 ± 0.01 ‐ ‐
Bulk
Ag
Oscillator A Ө (degrees) μ
Figure1. Complexdielectric functionspectra, ε= 1 +iε2, (arrowpointing t for
ε1 axis, arrow pointing right for ε2 axis) from 0.734 to 5.88 eV for a semi-infinite Ag
film parameterized with a combination of a Drude oscillator and two oscillators
assumingcriticalpointparabolicbands (CPPB)withparameters listed inTable2.
72
Photovoltaic Materials and Electronic Devices
- Titel
- Photovoltaic Materials and Electronic Devices
- Autor
- Joshua M. Pearce
- Herausgeber
- MDPI
- Ort
- Basel
- Datum
- 2016
- Sprache
- englisch
- Lizenz
- CC BY-NC-ND 4.0
- ISBN
- 978-3-03842-217-4
- Abmessungen
- 17.0 x 24.4 cm
- Seiten
- 216
- Schlagwörter
- Perovskite, Plasmonics, Nanostructured Materials, Anti-Reflection Coatings, Transparent Conductive Oxides, Amorphous Silicon, Dye-sensitized Solar Cells (DSSCs) Materials, Organic Photovoltaic Materials, Solar Energy Materials
- Kategorien
- Naturwissenschaften Physik
- Technik