Seite - 92 - in Photovoltaic Materials and Electronic Devices

24. Shan,A.;Fried,M.; Juhasz,G.;Major,C.;Polgár,O.;Németh,Á.;Petrik,P.;Dahal,L.R.; Chen, J.; Huang, Z. High-speed imaging/mapping spectroscopic ellipsometry for in-line analysisof roll-to-roll thin-filmphotovoltaics. IEEEJ.Photovolt. 2014, 4, 355–361. 25. Aryal, P.; Pradhan, P.; Attygalle, D.; Ibdah, A.-R.; Aryal, K.; Ranjan, V.; Marsillac, S.; Podraza,N.J.;Collins,R.W.Real-time, in-line,andmappingspectroscopicellipsometry forapplications inCu(inGa)Semetrology. IEEEJ.Photovolt. 2014, 4, 333–339. 26. Koirala, P.; Tan,X.; Li, J.; Podraza, N.J.;Marsillac, S.; Rockett, A.; Collins,R.W. Mapping spectroscopic ellipsometry of CdTe solar cells for property-performance correlations. In Proceedingsof the2014IEEE40thPhotovoltaicSpecialistConference (PVSC),Denver, CO,USA,8–13 June2014;pp.0674–0679. 27. Dahal,L.R.;Sainju,D.;Li, J.; Stoke, J.A.;Podraza,N.;Deng,X.;Collins,R.W.Plasmonic characteristicsofAg/ZnOback-reflectors for thinfilm Siphotovoltaics. InProceedings of the 33rd IEEE Photovoltaic Specialists Conference, PVSC ’08, San Diego, CA, USA, 11–16May2008;pp.1–6. 28. Dahal, L.R.; Sainju, D.; Podraza, N.; Marsillac, S.; Collins, R. Real time spectroscopic ellipsometry of Ag/ZnO and Al/ZnO interfaces for back-reflectors in thin film Si:H photovoltaics. ThinSolidFilms 2011, 519, 2682–2687. 29. Oldham, W. Numerical techniques for the analysis of lossy films. Surf. Sci. 1969, 16, 97–103. 30. Aspnes, D. Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements. Appl. Phys. Lett. 1993, 62, 343–345. 31. Ferlauto, A.; Ferreira, G.; Koval, R.; Pearce, J.; Wronski, C.; Collins, R.; Al-Jassim, M.; Jones, K. Evaluation of compositional depth profiles in mixed-phase (amorphous + crystalline) silicon films from real time spectroscopic ellipsometry. Thin Solid Films 2004, 455, 665–669. 32. Karki Gautam, L.; Haneef, H.; Junda, M.; Saint John, D.; Podraza, N. Approach for extractingcomplexdielectric functionspectra inweakly-absorbingregions. ThinSolid Films 2014, 571, 548–553. 33. Podraza, N.J.; Saint John, D.B.; Ko, S.W.; Schulze, H.M.; Li, J.; Dickey, E.C.; Trolier-McKinstry, S. Optical and structural properties of solution deposited nickel manganite thinfilms. ThinSolidFilms 2011, 519, 2919–2923. 34. Knights, J.C.; Lucovsky, G.; Nemanich, R.J. Defects in plasma-deposited a-Si:H. J.Non-Cryst. Solids 1979, 32, 393–403. 35. Langford,A.A.;Fleet,M.L.;Nelson,B.P.;Lanford,W.A.;Maley,N. Infraredabsorption strengthandhydrogencontentofhydrogenatedamorphoussilicon. Phys. Rev. B1992, 45, 13367–13377. 36. Podraza, N.J.; Saint John, D.B. Optical characterization of structurally graded Si1-xGex:H thin films. In Proceedings of the 2012 38th IEEE Photovoltaic Specialists Conference (PVSC),Austin,TX,USA,3–8 June2012;pp.000354–000359. 92