Seite - 95 - in Photovoltaic Materials and Electronic Devices

64. Pearce, J.M.; Podraza, N.; Collins, R.W.; Al-Jassim, M.M.; Jones, K.M.; Deng, J.; Wronski, C.R. Optimization of open circuit voltage in amorphous silicon solar cells with mixed-phase (amorphous + nanocrystalline) p-type contacts of low nanocrystalline content. J.Appl. Phys. 2007, 101. 65. Jung, M.; Lee, J.; Park, S.; Kim, H.; Chang, J. Investigation of the annealing effects on the structuralandopticalpropertiesofsputteredZnOthinfilms. J.Cryst. Growth2005,283, 384–389. 66. Kang, H.S.; Kang, J.S.; Kim, J.W.; Lee, S.Y. Annealing effect on the property of ultraviolet andgreenemissionsofZnOthinfilms. J.Appl. Phys. 2004, 95, 1246–1250. 67. Puchert, M.; Timbrell, P.; Lamb, R. Post deposition annealing of radio frequency magnetronsputteredZnOfilms. J.Vac. Sci. Technol. A 1996, 14, 2220–2230. 68. Rolo,A.G.;deCampos, J.A.;Viseu,T.;deLacerda-Arôso,T.;Cerqueira,M.Theannealing effectonstructuralandopticalpropertiesofZnOthinfilmsproducedbyrfsputtering. SuperlatticesMicrostruct. 2007, 42, 265–269. 69. Al Asmar, R.; Ferblantier, G.; Mailly, F.; Gall-Borrut, P.; Foucaran, A. Effect ofannealing on the electrical and optical properties of electron beam evaporated ZnO thin films. ThinSolidFilms 2005, 473, 49–53. 70. Liu, Y.C.; Tung, S.K.; Hsieh, J.H. Influence of annealing on optical properties and surface structureofZnOthinfilms. J.CrystalGrowth 2006, 287, 105–111. 71. Ferlauto, A.; Ferreira, G.; Pearce, J.; Wronski, C.; Collins, R.; Deng, X.; Ganguly, G. Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics. J. Appl. Phys. 2002, 92, 2424–2436. 72. De Meneses, D.; Malki, M.; Echegut, P. Structure and lattice dynamics of binary lead silicate glasses investigated by infrared spectroscopy. J. Non-Cryst. Solids 2006, 352, 769–776. 73. Podraza,N.;Wronski,C.;Horn,M.;Collins,R.Dielectric functionsofa-Si1´xGex:Hvs. Ge content, temperature, and processing: Advances in optical function parameterization. Mater. Res. Soc. Symp.Proc. 2006, A10. 74. Brodsky,M.;Cardona,M.;Cuomo, J. InfraredandRamanspectraof thesilicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering. Phys. Rev. B 1977, 16. 75. Saint John, D.B.; Shen, H.; Shin, H.-B.; Jackson, T.N.; Podraza, N.J. Infrared dielectric functions of hydrogenated amorphous silicon thin films determined by spectroscopic ellipsometry. InProceedingsof the201238thIEEEPhotovoltaicSpecialistsConference (PVSC),Austin,TX,USA,3–8 June2012;pp.003112–003117. 76. Müllerová, J.; Jurecˇka,S.;Šutta,P.Optical characterizationofpolysiliconthinfilmsfor solarapplications. Sol.Energy 2006, 80, 667–674. 77. Smets, A.; Kessels, W.; van de Sanden, M. Vacancies and voids in hydrogenated amorphoussilicon. Appl.Phys.Lett. 2003, 82, 1547–1549. 95