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3.2. ConvertingLeadHalides toPerovskite
In the sequential deposition method, PbI2 or/and PbCl2 were first dissolved in
a solvent. As PbI2 crystal has a layered structure, DMF can intercalate into the PbI2
interlayerspaceandscreenPbI2 viaPb-Obonding[71–73]. WhenDMFis intercalated,
theXRDpeakof thePbI2 (001)planeredshifts from14.8˝ to7.94˝ [72,73]. Thered-shift
of thisXRDpeakto9.17˝also indicates the intercalationofDMSO[43]. WhilePbCl2
doesn’tpossessasimilar layeredstructureasPbI2, its solubility ispoorwherePbCl2
nanoparticles may only suspend in the solvent [28]. However, depositing a mixture
of PbI2 and PbCl2 on the substrates result in a new PbICl phase [74], whose crystal
structure issimilar toPbCl2 [75].
At the beginning of the reaction of PbI2 and MAI, a predominant peak at
(220)appeared(asshowninFigure2B). Inotherwords, theMAPbI3 preferentially
grows along (220) plane at first. The annealing process increases the long range
crystalline order and results in the predominant (110) peak instead. Noting the (220)
is only a short range of (110), thus, another possible reason for the (110)-oriented
growthofMAPbI3-xClx andMAPbI3 maybebecause layeredcrystalstructureofPbI2
(growthalong(001)planesofPbI2 like the liquidcatalystclustermodelmentioned
inreference [76]). The latticeplanesof tetragonalMAPbI3 areshowedinFigure3.
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9,
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Figure
2.
XRD
patterns
of
glass
substrates
with
vapor
deposition
of
(A)
a
layer
of
PbI2;
and
(B)
a
layer
of PbI2 followed by a layer of MAI, repeating this step 7 times; XRD pattern of the (C) annealed
7‐time deposited PbI2/MAI
layer; (D) 1‐time deposited PbI2 (50 nm thickness)/MAI (50 nm
thickness)
layer; and (E) 1‐time deposited PbI2 (150 nm thickness)/MAI (150 nm thickness) layer. Reprinted
from reference
[77], Copyright © 2015, Royal
Society
of Chemistry.
Figure2. XRDpatternsofglasssubstrateswithvapordepositionof (A)a layerof
PbI2; and (B) a l yer of PbI2 followed by a layer of MAI, repeating this step 7 times;
XRD pattern of the (C) annealed 7-time deposited PbI2/MAI layer; (D) 1-time
deposited PbI2 (50 nm thickness)/MAI (50 nm thickness) layer; and (E) 1-time
depositedPbI2 (150nmthickness)/MAI(150nmthickness) layer. Reprintedfrom
reference [77],Copyright©2015,RoyalSocietyofChemistry.
101
Photovoltaic Materials and Electronic Devices
- Titel
- Photovoltaic Materials and Electronic Devices
- Autor
- Joshua M. Pearce
- Herausgeber
- MDPI
- Ort
- Basel
- Datum
- 2016
- Sprache
- englisch
- Lizenz
- CC BY-NC-ND 4.0
- ISBN
- 978-3-03842-217-4
- Abmessungen
- 17.0 x 24.4 cm
- Seiten
- 216
- Schlagwörter
- Perovskite, Plasmonics, Nanostructured Materials, Anti-Reflection Coatings, Transparent Conductive Oxides, Amorphous Silicon, Dye-sensitized Solar Cells (DSSCs) Materials, Organic Photovoltaic Materials, Solar Energy Materials
- Kategorien
- Naturwissenschaften Physik
- Technik