Seite - 146 - in Photovoltaic Materials and Electronic Devices
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InfluenceofOxygenConcentrationonthe
PerformanceofUltra-ThinRFMagnetron
SputterDepositedIndiumTinOxideFilms
asaTopElectrodeforPhotovoltaicDevices
JephiasGwamuri,MurugesanMarikkannan, JeyanthinathMayandi,
PatrickK.BowenandJoshuaM.Pearce
Abstract: The opportunity for substantial efficiency enhancements of thin film
hydrogenatedamorphoussilicon(a-Si:H)solarphotovoltaic(PV)cellsusingplasmonic
absorbers requires ultra-thin transparent conducting oxide top electrodes with low
resistivityandhightransmittancesinthevisiblerangeoftheelectromagneticspectrum.
Fabricating ultra-thin indium tin oxide (ITO) films (sub-50 nm) using conventional
methodshaspresentedanumberofchallenges;however,anovelmethodinvolving
chemicalshavingofthicker(greaterthan80nm)RFsputterdepositedhigh-qualityITO
filmshasbeendemonstrated. Thisstudyinvestigatestheeffectofoxygenconcentration
ontheetchratesofRFsputterdepositedITOfilmstoprovideadetailedunderstanding
of the interaction of all critical experimental parameters to help create even thinner
layerstoallowformorefinelytuneplasmonicresonances. ITOfilmsweredepositedon
siliconsubstrateswitha98-nm,thermallygrownoxideusingRFmagnetronsputtering
withoxygenconcentrationsof0,0.4and1.0sccmandannealedat300˝Cairambient.
Thenthefilmswereetchedusingacombinationofwaterandhydrochloricandnitric
acids for1,3,5and8minatroomtemperature. In-betweeneachetchingprocesscycle,
the films were characterized by X-ray diffraction, atomic force microscopy, Raman
Spectroscopy,4-pointprobe(electricalconductivity),andvariableanglespectroscopic
ellipsometry. All thefilmswerepolycrystalline innatureandhighlyorientedalong
the(222)reflection. Ultra-thinITOfilmswithrecordlowresistivityvalues(as lowas
5.83ˆ10´4Ω¨cm) were obtained and high optical transparency is exhibited in the
300–1000nmwavelengthregionforall theITOfilms. Theetchrate,preferredcrystal
latticegrowthplane,d-spacingandlatticedistortionwerealsoobservedtobehighly
dependentonthenatureofgrowthenvironmentforRFsputterdepositedITOfilms.
The structural, electrical, and optical properties of the ITO films are discussed with
respect totheoxygenambientnatureandetchingtimeindetail toprovideguidance
forplasmonicenhanceda-Si:HsolarPVcell fabrication.
Reprinted fromMaterials. Cite as: Gwamuri, J.; Marikkannan, M.; Mayandi, J.;
Bowen, P.K.; Pearce, J.M. Influence of Oxygen Concentration on the Performance
of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top
ElectrodeforPhotovoltaicDevices.Materials2016,9, 63.
146
Photovoltaic Materials and Electronic Devices
- Titel
- Photovoltaic Materials and Electronic Devices
- Autor
- Joshua M. Pearce
- Herausgeber
- MDPI
- Ort
- Basel
- Datum
- 2016
- Sprache
- englisch
- Lizenz
- CC BY-NC-ND 4.0
- ISBN
- 978-3-03842-217-4
- Abmessungen
- 17.0 x 24.4 cm
- Seiten
- 216
- Schlagwörter
- Perovskite, Plasmonics, Nanostructured Materials, Anti-Reflection Coatings, Transparent Conductive Oxides, Amorphous Silicon, Dye-sensitized Solar Cells (DSSCs) Materials, Organic Photovoltaic Materials, Solar Energy Materials
- Kategorien
- Naturwissenschaften Physik
- Technik