Seite - 194 - in Photovoltaic Materials and Electronic Devices

within a pin GaAs grown on Si substrate has been found to improve the spectral response to 1200 nm, despite imperfect structural properties. These results hold greatpromise for futuredemonstrationofhighefficiencyIBSCsonSisubstratevia heteroepitaxyusingnanostructuredsurfaces. Acknowledgments: The third author (Bouraoui Ilahi) would like to extend his sincere appreciation to the Deanship of Scientific Research at King Saud University for funding thisResearchGroupNO.: RG-1436-014. AuthorContributions: Bilel Azeza and Ridha M’ghaieth did the photocurrent measurements. Mohamed Helmi Hadj Alouane and Bouraoui Ilahi did the PL measurements. Larbi Sfaxi and Hassen Maaref did the samples growth. Gilles Patriarche did the TEM image and Afif Fouzridid theXRDmeasurements. All theauthorshavecontributedto the interpretationof theresultsandrevisionof thepaperwrittenbyBilelAzeza. Conflictsof Interest: Theauthorsdeclarenoconflictof interest. References 1. Luque,A.; Stanley, C.Understanding intermediate-bandsolarcells.Nat. Photonics2012, 6, 146–152. 2. Luque, A.; Marti, A. Increasing the efficiency of ideal solar cells by photon induced transitionsat intermediate levels.Phys. Rev. Lett. 1997,78, 5014–5017. 3. Marti, A.; Antolin, E.; Stanley, R.C.; Farmer, C.D.; Lopez, N.; Diaz, P.; Canovas, E.; Linares, G.P.; Luque, A. Production of photocurrent due to intermediate-to-conduction-band transitions: A demonstration of a key operating principleof the intermediate-bandsolarcell.Phys. Rev. Lett. 2006,97. 4. Marrón,D.F.;Artacho, I.; Stanley,R.C.;Steer,M.;Kaizu,T.;Shoji,Y.;Ahsan,N.;Okada,Y.; Barrigón, E.;Rey-Stolle, I.; et al.Application ofphotoreflectance toadvanced multilayer structures forphotovoltaics.Mater. Sci. Eng. B2013,178, 599–608. 5. Wu,J.;Makableh,Y.M.F.;Vasan,R.;Manasreh,M.O.;Liang,B.;Reyner,C.J.;Huffaker,D.L. Strong interband transitions in InAs quantum dots solar cell.Appl. Phys. Lett. 2012,100. 6. Bailey, C.G.; Forbes, D.V.; Raffaelle, R.P.; Hubbard, S.M. Near 1 V open circuit voltage InAs/GaAsquantumdotsolarcells.Appl. Phys. Lett. 2011,98. 7. Guimard, D.; Morihara, R.; Bordel, D.; Tanabe, K.; Wakayama, Y.; Nishioka, M.; Arakawa, Y. Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrentandwithoutdegradationofopencircuitvoltage.Appl. Phys. Lett. 2010,96. 8. Linares, P.G.; Marti, A.; Antoli, E.; Farmer, C.D.; Ramiro, I.; Stanley, C.R.; Luque, A. Voltage recovery in intermediate band solar cells. SolEnergyMater. Sol. Cells2012,98, 240–244. 9. Soga, T.; Jimbo, T.; Arokiaraj, J.; Umeno, M. Growth of stress-released GaAs on GaAs/Si structurebymetalorganicchemicalvapordeposition.Appl. Phys. Lett. 2000,77. 10. Azeza, B.; Ezzedini, M.; Zaaboub, Z.; M’ghaieth, R.; Sfaxi, L.; Hassen, F.; Maaref, H. Impact of rough silicon buffer layer on electronic quality of GaAs grown on Si substrate. Curr.Appl. Phys. 2012,12, 1256–1258. 194