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37. Dahal, L.R.; Zhiquan, H.; Attygalle, D.; Salupo, C.; Marsillac, S.; Podraza, N.J.; Collins, R.W. Correlations between mapping spectroscopic ellipsometry results and solarcellperformanceforevaluationsofnonuniformity inthin-filmsiliconphotovoltaics. IEEEJ.Photovolt. 2013, 3, 387–393. 38. Lee, J.; Rovira, P.; An, I.; Collins, R. Rotating-compensator multichannel ellipsometry: Applications for real time Stokes vector spectroscopy of thin film growth. Rev. Sci. Instrum. 1998, 69, 1800–1810. 39. Johs,B.D.;Woollam, J.A.;Herzinger,C.M.;Hilfiker, J.N.;Synowicki,R.A.;Bungay,C.L. Overview of variable-angle spectroscopic ellipsometry (VASE): II. In Advanced Applications, Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series; Society of Photo-Optical Instrumentation Engineers: Bellingham, WA, USA, 1999; pp.29–58. 40. Johs, B.; Herzinger, C.M. Quantifying the accuracy of ellipsometer systems. Phys. Status Solidi 2008, 5, 1031–1035. 41. Hilfiker, J.N.; Bungay, C.L.; Synowicki, R.A.; Tiwald, T.E.; Herzinger, C.M.; Johs, B.; Pribil, G.K.; Woollam, J.A. Progress in spectroscopic ellipsometry: Applications from vacuumultraviolet to infrared. J.Vac. Sci. Technol.A 2003, 21, 1103–1108. 42. Aspnes,D.E.Opticalpropertiesof thinfilms. ThinSolidFilms 1982, 89, 249–262. 43. Fujiwara, H.; Koh, J.; Rovira, P.; Collins, R. Assessment of effective-medium theories in the analysis of nucleation and microscopic surface roughness evolution for semiconductor thinfilms. Phys. Rev. B 2000, 61. 44. Azzam, R.; Bashara, N. Ellipsometry and Polarized Light; North-Holland: Amsterdam, The Netherlands,1981. 45. Tiwald, T.E.; Thompson, D.W.; Woollam, J.A.; Paulson, W.; Hance, R. Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentrationdepthprofiles. ThinSolidFilms 1998, 313–314, 661–666. 46. Aspnes, D.E. Handbook on Semiconductors; Balkanski, A.M., Ed.; North-Holland: Amsterdam,TheNetherlands,1980;pp.125–127. 47. Collins, R.W.; Ferlauto, A.S. Handbook of Ellipsometry; Tompkins, H., Irene, E.A., Eds.; WilliamAndrew: Norwich,NY,USA,2005;pp.159–171. 48. Sainju, D.; van den Oever, P.J.; Podraza, N.J.; Syed, M.; Stoke, J.A.; Jie, C.; Xiesen, Y.; Xunming,D.;Collins,R.W.Originofoptical losses inAg/ZnOback-reflectors for thin film Si photovoltaics. In Proceedings of the Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Waikoloa, HI, USA, 7–12 May 2006;pp.1732–1735. 49. Ferlauto, A.S.; Collins, R.W. Handbook of Ellipsometry; Tompkins, H., Irene, E.A., Eds.; WilliamAndrew: Norwich,NY,USA,2005;pp.125–129. 50. Jellison, G.E.; Boatner, L.A. Optical functions of uniaxial ZnO determined by generalized ellipsometry. Phys.Rev.B 1998, 58, 3586–3589. 93
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Photovoltaic Materials and Electronic Devices
Title
Photovoltaic Materials and Electronic Devices
Author
Joshua M. Pearce
Editor
MDPI
Location
Basel
Date
2016
Language
English
License
CC BY-NC-ND 4.0
ISBN
978-3-03842-217-4
Size
17.0 x 24.4 cm
Pages
216
Keywords
Perovskite, Plasmonics, Nanostructured Materials, Anti-Reflection Coatings, Transparent Conductive Oxides, Amorphous Silicon, Dye-sensitized Solar Cells (DSSCs) Materials, Organic Photovoltaic Materials, Solar Energy Materials
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