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37. Dahal, L.R.; Zhiquan, H.; Attygalle, D.; Salupo, C.; Marsillac, S.; Podraza, N.J.; Collins, R.W. Correlations between mapping spectroscopic ellipsometry results and solarcellperformanceforevaluationsofnonuniformity inthin-filmsiliconphotovoltaics. IEEEJ.Photovolt. 2013, 3, 387–393. 38. Lee, J.; Rovira, P.; An, I.; Collins, R. Rotating-compensator multichannel ellipsometry: Applications for real time Stokes vector spectroscopy of thin film growth. Rev. Sci. Instrum. 1998, 69, 1800–1810. 39. Johs,B.D.;Woollam, J.A.;Herzinger,C.M.;Hilfiker, J.N.;Synowicki,R.A.;Bungay,C.L. Overview of variable-angle spectroscopic ellipsometry (VASE): II. In Advanced Applications, Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series; Society of Photo-Optical Instrumentation Engineers: Bellingham, WA, USA, 1999; pp.29–58. 40. Johs, B.; Herzinger, C.M. Quantifying the accuracy of ellipsometer systems. Phys. Status Solidi 2008, 5, 1031–1035. 41. Hilfiker, J.N.; Bungay, C.L.; Synowicki, R.A.; Tiwald, T.E.; Herzinger, C.M.; Johs, B.; Pribil, G.K.; Woollam, J.A. Progress in spectroscopic ellipsometry: Applications from vacuumultraviolet to infrared. J.Vac. Sci. Technol.A 2003, 21, 1103–1108. 42. Aspnes,D.E.Opticalpropertiesof thinfilms. ThinSolidFilms 1982, 89, 249–262. 43. Fujiwara, H.; Koh, J.; Rovira, P.; Collins, R. Assessment of effective-medium theories in the analysis of nucleation and microscopic surface roughness evolution for semiconductor thinfilms. Phys. Rev. B 2000, 61. 44. Azzam, R.; Bashara, N. Ellipsometry and Polarized Light; North-Holland: Amsterdam, The Netherlands,1981. 45. Tiwald, T.E.; Thompson, D.W.; Woollam, J.A.; Paulson, W.; Hance, R. Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentrationdepthprofiles. ThinSolidFilms 1998, 313–314, 661–666. 46. Aspnes, D.E. Handbook on Semiconductors; Balkanski, A.M., Ed.; North-Holland: Amsterdam,TheNetherlands,1980;pp.125–127. 47. Collins, R.W.; Ferlauto, A.S. Handbook of Ellipsometry; Tompkins, H., Irene, E.A., Eds.; WilliamAndrew: Norwich,NY,USA,2005;pp.159–171. 48. Sainju, D.; van den Oever, P.J.; Podraza, N.J.; Syed, M.; Stoke, J.A.; Jie, C.; Xiesen, Y.; Xunming,D.;Collins,R.W.Originofoptical losses inAg/ZnOback-reflectors for thin film Si photovoltaics. In Proceedings of the Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Waikoloa, HI, USA, 7–12 May 2006;pp.1732–1735. 49. Ferlauto, A.S.; Collins, R.W. Handbook of Ellipsometry; Tompkins, H., Irene, E.A., Eds.; WilliamAndrew: Norwich,NY,USA,2005;pp.125–129. 50. Jellison, G.E.; Boatner, L.A. Optical functions of uniaxial ZnO determined by generalized ellipsometry. Phys.Rev.B 1998, 58, 3586–3589. 93
zurĂĽck zum  Buch Photovoltaic Materials and Electronic Devices"
Photovoltaic Materials and Electronic Devices
Titel
Photovoltaic Materials and Electronic Devices
Autor
Joshua M. Pearce
Herausgeber
MDPI
Ort
Basel
Datum
2016
Sprache
englisch
Lizenz
CC BY-NC-ND 4.0
ISBN
978-3-03842-217-4
Abmessungen
17.0 x 24.4 cm
Seiten
216
Schlagwörter
Perovskite, Plasmonics, Nanostructured Materials, Anti-Reflection Coatings, Transparent Conductive Oxides, Amorphous Silicon, Dye-sensitized Solar Cells (DSSCs) Materials, Organic Photovoltaic Materials, Solar Energy Materials
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Technik
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